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NTH4L013N120M3S Datasheet Sic MOSFET

Manufacturer: onsemi

Overview: DATA SHEET .onsemi. Silicon Carbide (SiC) MOSFET – EliteSiC, 13 mohm, 1200 V, M3S,.

Key Features

  • Typ. RDS(on) = 13 mW @ VGS = 18 V.
  • Ultra Low Gate Charge (QG(tot) = 254 nC).
  • High Speed Switching with Low Capacitance (Coss = 262 pF).
  • 100% Avalanche Tested.
  • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
  • Free 2LI (on second level interconnection) Typical.

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