NTH4L013N120M3S Overview
Silicon Carbide (SiC) MOSFET EliteSiC, 13 mohm, 1200 V, M3S, TO-247-4L NTH4L013N120M3S.
NTH4L013N120M3S Key Features
- Typ. RDS(on) = 13 mW @ VGS = 18 V
- Ultra Low Gate Charge (QG(tot) = 254 nC)
- High Speed Switching with Low Capacitance (Coss = 262 pF)
- 100% Avalanche Tested
- This Device is Halide Free and RoHS pliant with exemption 7a