NTH4L015N065SC1 - SiC MOSFET

Datasheet Summary

Features

Typ. RDS(on) = 12 mW @ VGS = 18 V Typ. RDS(on) = 15 mW @ VGS = 15 V.
Ultra Low Gate Charge (QG(tot) = 283 nC).
High Speed Switching with Low Capacitance (Coss = 430 pF).
100% Avalanche Tested.
TJ = 175°C.
This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
Free 2LI (on second level interconnection) Typical.

ON Semiconductor

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Datasheet Details

Part number	NTH4L015N065SC1
Manufacturer	ON Semiconductor
File Size	351.08 KB
Description	SiC MOSFET
Datasheet	NTH4L015N065SC1 Datasheet
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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 12 mohm, 650 V, M2, TO-247-4L NTH4L015N065SC1 Features • Typ. RDS(on) = 12 mW @ VGS = 18 V Typ.

Published: Feb 16, 2023 |