NTH4L015N065SC1 Description
Silicon Carbide (SiC) MOSFET EliteSiC, 12 mohm, 650 V, M2, TO-247-4L NTH4L015N065SC1.
NTH4L015N065SC1 Key Features
- Typ. RDS(on) = 12 mW @ VGS = 18 V
- Ultra Low Gate Charge (QG(tot) = 283 nC)
- High Speed Switching with Low Capacitance (Coss = 430 pF)
- 100% Avalanche Tested
- TJ = 175°C
- This Device is Halide Free and RoHS pliant with exemption 7a