NTH4L020N090SC1 Description
DATA SHEET .onsemi. Silicon Carbide (SiC) MOSFET EliteSiC, 20 mohm, 900 V, M2, TO-247-4L V(BR)DSS 900 V RDS(ON) MAX 28 mW @ 15 V ID MAX 118 A.
NTH4L020N090SC1 Key Features
- Typ. RDS(on) = 20 mW @ VGS = 15 V
- Ultra Low Gate Charge (QG(tot) = 196 nC)
- Low Effective Output Capacitance (Coss = 296 pF)
- 100% UIL Tested
- This Device is Halide Free and RoHS pliant with exemption 7a