NTH4L020N120SC1 Description
Silicon Carbide (SiC) MOSFET EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L NTH4L020N120SC1.
NTH4L020N120SC1 Key Features
- Typ. RDS(on) = 20 mW
- Ultra Low Gate Charge (QG(tot) = 220 nC)
- High Speed Switching with Low Capacitance (Coss = 258 pF)
- 100% Avalanche Tested
- TJ = 175°C
- This Device is Halide Free and RoHS pliant with exemption 7a