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NTH4L020N120SC1 - SiC MOSFET

Datasheet Summary

Features

  • Typ. RDS(on) = 20 mW.
  • Ultra Low Gate Charge (QG(tot) = 220 nC).
  • High Speed Switching with Low Capacitance (Coss = 258 pF).
  • 100% Avalanche Tested.
  • TJ = 175°C.
  • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
  • Free 2LI (on second level interconnection) Typical.

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Full PDF Text Transcription

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L NTH4L020N120SC1 Features • Typ.
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