NTH4L022N120M3S - SiC MOSFET

Datasheet Summary

Features

Typ. RDS(on) = 22 mW @ VGS = 18 V.
Ultra Low Gate Charge (QG(tot) = 137 nC).
High Speed Switching with Low Capacitance (Coss = 146 pF).
100% Avalanche Tested.
This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb.
Free 2LI (on Second Level Interconnection) Typical.

ON Semiconductor

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Datasheet Details

Part number	NTH4L022N120M3S
Manufacturer	ON Semiconductor
File Size	326.19 KB
Description	SiC MOSFET
Datasheet	NTH4L022N120M3S Datasheet
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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, TO-247-4L V(BR)DSS 1200 V RDS(ON) MAX 30 mW @ 18 V D ID MAX 89 A NTH4L022N120M3S Features • Typ.

Published: Feb 16, 2023 |