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NTH4L022N120M3S - SiC MOSFET

Key Features

  • Typ. RDS(on) = 22 mW @ VGS = 18 V.
  • Ultra Low Gate Charge (QG(tot) = 137 nC).
  • High Speed Switching with Low Capacitance (Coss = 146 pF).
  • 100% Avalanche Tested.
  • This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb.
  • Free 2LI (on Second Level Interconnection) Typical.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, TO-247-4L V(BR)DSS 1200 V RDS(ON) MAX 30 mW @ 18 V D ID MAX 89 A NTH4L022N120M3S Features • Typ.