NTH4L022N120M3S Description
DATA SHEET .onsemi. Silicon Carbide (SiC) MOSFET EliteSiC, 22 mohm, 1200 V, M3S, TO-247-4L V(BR)DSS 1200 V RDS(ON) MAX 30 mW @ 18 V D ID MAX 89.
NTH4L022N120M3S Key Features
- Typ. RDS(on) = 22 mW @ VGS = 18 V
- Ultra Low Gate Charge (QG(tot) = 137 nC)
- High Speed Switching with Low Capacitance (Coss = 146 pF)
- 100% Avalanche Tested
- This Device is Halide Free and RoHS pliant with Exemption 7a