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NTH4L023N065M3S - SiC MOSFET

Datasheet Summary

Features

  • Typical RDS(on) = 23 mW @ VGS = 18 V.
  • Ultra Low Gate Charge (QG(tot) = 69 nC).
  • High Speed Switching with Low Capacitance (Coss = 153 pF).
  • 100% Avalanche Tested.
  • This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb.
  • Free 2LI (on second level interconnection).

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