NTH4L023N065M3S Description
DATA SHEET .onsemi. Silicon Carbide (SiC) MOSFET - EliteSiC, 23 mohm, 650 V, M3S, TO-247-4L V(BR)DSS 650 V RDS(ON) TYP 23 mW @ 18 V ID MAX 67 A.
NTH4L023N065M3S Key Features
- Typical RDS(on) = 23 mW @ VGS = 18 V
- Ultra Low Gate Charge (QG(tot) = 69 nC)
- High Speed Switching with Low Capacitance (Coss = 153 pF)
- 100% Avalanche Tested
- This Device is Halide Free and RoHS pliant with Exemption 7a