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NTH4L025N065SC1 - SiC MOSFET

Key Features

  • Typ. RDS(on) = 19 mW @ VGS = 18 V Typ. RDS(on) = 25 mW @ VGS = 15 V.
  • Ultra Low Gate Charge (QG(tot) = 164 nC).
  • Low Capacitance (Coss = 278 pF).
  • 100% Avalanche Tested.
  • TJ = 175°C.
  • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
  • Free 2LI (on second level interconnection) Typical.

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 19 mohm, 650 V, M2, TO-247-4L NTH4L025N065SC1 Features • Typ. RDS(on) = 19 mW @ VGS = 18 V Typ.