NTH4L030N120M3S
NTH4L030N120M3S is manufactured by onsemi.
DATA SHEET .onsemi.
Silicon Carbide (SiC) MOSFET
- EliteSiC, 29 mohm, 1200 V, M3S, TO-247-4L NTH4L030N120M3S
Features
- Typ. RDS(on) = 29 mW @ VGS = 18 V
- Ultra Low Gate Charge (QG(tot) = 107 nC)
- High Speed Switching with Low Capacitance (Coss = 106 pF)
- 100% Avalanche Tested
- This Device is Halide Free and RoHS pliant with exemption 7a,
Pb- Free 2LI (on second level interconnection)
Typical Applications
- Solar Inverters
- Electric Vehicle Charging Stations
- UPS (Uninterruptible Power Supplies)
- Energy Storage Systems
- SMPS (Switch Mode Power Supplies)
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
Gate- to-...
