Datasheet Summary
DATA SHEET .onsemi.
Silicon Carbide (SiC) MOSFET
- EliteSiC, 33 mohm, 650 V, M2, TO-247-4L
Features
- Typ. RDS(on) = 33 mW @ VGS = 18 V
Typ. RDS(on) = 45 mW @ VGS = 15 V
- Ultra Low Gate Charge (QG(tot) = 105 nC)
- High Speed Switching with Low Capacitance (Coss = 162 pF)
- 100% Avalanche Tested
- TJ = 175°C
- This Device is Halide Free and RoHS pliant with exemption 7a,
Pb- Free 2LI (on second level interconnection)
Typical Applications
- SMPS (Switching Mode Power Supplies)
- Solar Inverters
- UPS (Uninterruptable Powere Supplies)
- Energy Storages
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source...