NTH4L060N090SC1 Datasheet Sic MOSFET

Manufacturer: onsemi

Overview: DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 60 mohm, 900 V, M2, TO-247-4L.

Datasheet Details

Part number	NTH4L060N090SC1
Manufacturer	onsemi
File Size	913.67 KB
Description	SiC MOSFET
Datasheet	NTH4L060N090SC1-ONSemiconductor.pdf

Key Features

Typ. RDS(on) = 60 mW @ VGS = 15 V Typ. RDS(on) = 43 mW @ VGS = 18 V.
Ultra Low Gate Charge (typ. QG(tot) = 87 nC).
Low Effective Output Capacitance (typ. Coss = 113 pF).
100% UIL Tested.
This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
Free 2LI (on second level interconnection) Typical.

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