NTH4L060N090SC1 Description
Silicon Carbide (SiC) MOSFET EliteSiC, 60 mohm, 900 V, M2, TO-247-4L NTH4L060N090SC1.
NTH4L060N090SC1 Key Features
- Typ. RDS(on) = 60 mW @ VGS = 15 V
- Ultra Low Gate Charge (typ. QG(tot) = 87 nC)
- Low Effective Output Capacitance (typ. Coss = 113 pF)
- 100% UIL Tested
- This Device is Halide Free and RoHS pliant with exemption 7a