NTH4L080N120SC1 Description
Silicon Carbide (SiC) MOSFET uses a pletely new technology that provide superior switching performance and higher reliability pared to Silicon. In addition, the low ON resistance and pact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
NTH4L080N120SC1 Key Features
- 1200 V @ TJ = 175°C
- Max RDS(on) = 110 mW at VGS = 20 V, ID = 20 A
- High Speed Switching with Low Capacitance
- 100% Avalanche Tested
- This Device is Halide Free and RoHS pliant with exemption 7a