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NTH4LN019N65S3H - N-Channel MOSFET

Description

SUPERFET III MOSFET is onsemi’s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Features

  • 700 V @ TJ = 150°C.
  • Typ. RDS(on) = 15 mW.
  • Ultra Low Gate Charge (Typ. Qg = 282 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 2495 pF).
  • 100% Avalanche Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet Details

Part number NTH4LN019N65S3H
Manufacturer ON Semiconductor
File Size 260.37 KB
Description N-Channel MOSFET
Datasheet download datasheet NTH4LN019N65S3H Datasheet
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Full PDF Text Transcription

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MOSFET - Power, N-Channel, SUPERFET) III, FAST 650 V, 19.3 mW, 75 A NTH4LN019N65S3H Description SUPERFET III MOSFET is onsemi’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET FAST series is very suitable for the various power systems for miniaturization and higher efficiency. Features • 700 V @ TJ = 150°C • Typ. RDS(on) = 15 mW • Ultra Low Gate Charge (Typ. Qg = 282 nC) • Low Effective Output Capacitance (Typ. Coss(eff.
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