NTH4LN040N65S3H Key Features
- 700 V @ TJ = 150°C
- Typ. RDS(on) = 32 mW
- Ultra Low Gate Charge (Typ. Qg = 132 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 1267 pF)
- 100% Avalanche Tested
- These Devices are Pb-Free and are RoHS pliant
| Part Number | Description |
|---|---|
| NTH4LN019N65S3H | N-Channel MOSFET |
| NTH4LN061N60S5H | N-Channel Power MOSFET |
| NTH4LN067N65S3H | N-Channel MOSFET |
| NTH4LN095N65S3H | N-Channel Power MOSFET |
| NTH4L013N120M3S | SiC MOSFET |