NTHD4N02F Description
NTHD4N02F Power MOSFET and Schottky Diode 20 V, 3.9 A, N−Channel, with 3.7 A Schottky Barrier Diode, ChipFETt.
NTHD4N02F Key Features
- Leadless SMD Package Featuring a MOSFET and Schottky Diode
- 40% Smaller than TSOP-6 Package with Better Thermals
- Super Low Gate Charge MOSFET
- Ultra Low VF Schottky
- Pb-Free Package is Available
NTHD4N02F Applications
- Fast Switching, low Gate Charge for DC−to−DC Buck and Boost
- Li−Ion Battery Applications in Cell Phones, PDAs, DSCs