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NTHD5904T1
Power MOSFET Dual N−Channel
3.1 Amps, 20 Volts
Features
• Low RDS(on) for Higher Efficiency • Logic Level Gate Drive • Miniature ChipFETt Surface Mount Package Saves Board Space
Applications
• Power Management in Portable and Battery−Powered Products; i.e.,
Cellular and Cordless Telephones and PCMCIA Cards
http://onsemi.com
DUAL N−CHANNEL 3.1 AMPS, 20 VOLTS
RDS(on) = 75 mW
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Steady Symbol 5 secs State Unit
Drain−Source Voltage
Gate−Source Voltage
Continuous Drain Current (TJ = 150°C) (Note 1) TA = 25°C TA = 85°C
Pulsed Drain Current
Continuous Source Current (Diode Conduction) (Note 1)
VDS
20
V
VGS
"12
V
ID
A
"4.2 "3.0
"3.1 "2.2
IDM
"10
A
IS
1.8
0.
NTHD5904T1 Datasheet
