NTHL020N120SC1 Overview
MOSFET - SiC Power, Single N-Channel NTHL020N120SC1 1200 V, 20 mW, 103.
NTHL020N120SC1 Key Features
- Typ. RDS(on) = 20 mW
- Ultra Low Gate Charge (QG(tot) = 203 nC)
- Capacitance (Coss = 260 pF)
- 100% UIL Tested
- These Devices are RoHS pliant