NTHL023N065M3S
NTHL023N065M3S is manufactured by onsemi.
DATA SHEET .onsemi.
Silicon Carbide (SiC) MOSFET
- EliteSiC, 23 mohm, 650 V, M3S, TO-247-3L NTHL023N065M3S
Features
- Typical RDS(on) = 23 mW @ VGS = 18 V
- Ultra Low Gate Charge (QG(tot) = 69 nC)
- High Speed Switching with Low Capacitance (Coss = 153 pF)
- 100% Avalanche Tested
- This Device is Halide Free and RoHS pliant with Exemption 7a,
Pb- Free 2LI (on second level interconnection)
Applications
- SMPS, Solar Inverters, UPS, Energy Storages, EV Charging
Infrastructure
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage Gate- to- Source Voltage Continuous Drain Current Power Dissipation Continuous Drain Current Power...
