NTHL025N065SC1
NTHL025N065SC1 is manufactured by onsemi.
Silicon Carbide (SiC) MOSFET
- EliteSiC, 19 mohm, 650 V , M2, TO-247-3L
Features
- Typ. RDS(on) = 19 mW @ VGS = 18 V
Typ. RDS(on) = 25 mW @ VGS = 15 V
- Ultra Low Gate Charge (QG(tot) = 164 nC)
- Low Capacitance (Coss = 278 pF)
- 100% Avalanche Tested
- TJ = 175°C
- This Device is Halide Free and RoHS pliant with exemption 7a,
Pb- Free 2LI (on second level interconnection)
Typical Applications
- SMPS (Switching Mode Power Supplies)
- Solar Inverters
- UPS (Uninterruptable Power Supplies)
- Energy Storages
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
VDSS
Gate- to- Source Voltage
- 8/+22...
