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NTHL040N120M3S - SiC MOSFET

Datasheet Summary

Features

Typ. RDS(on) = 40 mW @ VGS = 18 V.
Ultra Low Gate Charge (QG(tot) = 75 nC).
High Speed Switching with Low Capacitance (Coss = 80 pF).
100% Avalanche Tested.
This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
Free 2LI (on second level interconnection) Typical.

ON Semiconductor

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NTHL040N120M3S SiC MOSFET by ON Semiconductor - Datasheet Preview — Datasheet preview – NTHL040N120M3S

Datasheet Details

Part number	NTHL040N120M3S
Manufacturer	ON Semiconductor
File Size	305.65 KB
Description	SiC MOSFET
Datasheet	NTHL040N120M3S Datasheet
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Full PDF Text Transcription

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Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200 V, M3S, TO-247-3L NTHL040N120M3S Features • Typ.

Published: Sep 1, 2024 |