NTHL060N090SC1
NTHL060N090SC1 is N-Channel MOSFET manufactured by onsemi.
DATA SHEET .onsemi.
Silicon Carbide (Si C) MOSFET
- Elite Si C, 60 mohm, 900 V, M2, TO-247-3L
Features
- Typ. RDS(on) = 60 m W @ VGS = 15 V
- Typ. RDS(on) = 43 m W @ VGS = 18 V
- Ultra Low Gate Charge (typ. QG(tot) = 87 n C)
- Low Effective Output Capacitance (typ. Coss = 113 p F)
- 100% UIL Tested
- This Device is Halide Free and Ro HS pliant with exemption 7a,
Pb- Free 2LI (on second level interconnection)
Typical Applications
- UPS
- DC- DC Converter
- Boost Inverter
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
Gate- to- Source Voltage
Remended Operation Values of Gate- to- Source Voltage
TC < 175°C
VDSS
VGS +22/- 8 V
VGSop +15/- 5 V
Continuous Drain Current Rq JC
Steady State
TC = 25°C
Power Dissipation Rq JC
Continuous Drain Current Rq...
