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NTHL1000N170M1 Datasheet SiC MOSFET

Manufacturer: onsemi

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Overview

Silicon Carbide (SiC) MOSFET - EliteSiC, 960 mohm, 1700 V, M1,.

Key Features

  • Typ. RDS(on) = 960 mW.
  • Ultra Low Gate Charge (typ. QG(tot) = 14 nC).
  • Low Effective Output Capacitance (typ. Coss = 11 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant Typical.

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