• Part: NTHL1000N170M1
  • Manufacturer: onsemi
  • Size: 343.81 KB
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NTHL1000N170M1 Description

Silicon Carbide (SiC) MOSFET - EliteSiC, 960 mohm, 1700 V, M1, TO-247-3L NTHL1000N170M1.

NTHL1000N170M1 Key Features

  • Typ. RDS(on) = 960 mW
  • Ultra Low Gate Charge (typ. QG(tot) = 14 nC)
  • Low Effective Output Capacitance (typ. Coss = 11 pF)
  • 100% Avalanche Tested
  • RoHS pliant