NTHL1000N170M1 Overview
Key Specifications
Key Features
- Typ. RDS(on) = 960 mW
- Ultra Low Gate Charge (typ. QG(tot) = 14 nC)
- Low Effective Output Capacitance (typ. Coss = 11 pF)
- 100% Avalanche Tested
- RoHS Compliant
Pricing from 5.46 USD, available from DigiKey and Newark.
Price & Availability
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| DigiKey | 380 | 1+ : 5.46 USD 10+ : 3.64 USD |
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| Newark | 0 | 450+ : 2.26 USD 500+ : 2.2 USD |
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Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| AP9563GH | Advanced Power Electronics Corp | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| A2SHB | HAOHAI | N-Channel MOSFET |
| FCPF360N65S3R0L | onsemi | N-Channel MOSFET |