NTHL1000N170M1
NTHL1000N170M1 is SiC MOSFET manufactured by onsemi.
Silicon Carbide (SiC) MOSFET
- EliteSiC, 960 mohm, 1700 V, M1, TO-247-3L
Features
- Typ. RDS(on) = 960 mW
- Ultra Low Gate Charge (typ. QG(tot) = 14 nC)
- Low Effective Output Capacitance (typ. Coss = 11 pF)
- 100% Avalanche Tested
- RoHS pliant
Typical Applications
- Solar Inverters
- Electric Vehicle Charging Stations
- Electric Storing Systems
- SMPS (Switch Mode Power Supplies)
- UPS (Uninterruptible Power Supplies)
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
VDSS
Gate- to- Source Voltage
- 15/+25 V
Remended Operation Values TC < 175°C VGSop
- 5/+20 V of Gate- to- Source Voltage
Continuous...
