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NTJD2152P Trench Small Signal MOSFET
8 V, Dual P−Channel, SC−88 ESD Protection
Features http://onsemi.com
V(BR)DSS RDS(on) TYP 0.22 W @ −4.5 V −8 V 0.32 W @ −2.5 V 0.51 W @ −1.8 V −0.775 A ID Max
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Leading –8 V Trench for Low RDS(ON) Performance ESD Protected Gate Small Footprint (2 x 2 mm) Same Package as SC−70−6 Pb−Free Packages are Available Load Power switching DC−DC Conversion Li−Ion Battery Charging Circuits Cell Phones, Media Players, Digital Cameras, PDAs
Applications SOT−363 SC−88 (6 LEADS)
S1 Value −8.0 ±8.
NTJD2152P Datasheet
