Datasheet Summary
NTJD2152P Trench Small Signal MOSFET
8 V, Dual P- Channel, SC- 88 ESD Protection
Features http://onsemi.
V(BR)DSS RDS(on) TYP 0.22 W @
- 4.5 V
- 8 V 0.32 W @
- 2.5 V 0.51 W @
- 1.8 V
- 0.775 A ID Max
- -
- -
- -
- -
- Leading
- 8 V Trench for Low RDS(ON) Performance ESD Protected Gate Small Footprint (2 x 2 mm) Same Package as SC- 70- 6 Pb- Free Packages are Available Load Power switching DC- DC Conversion Li- Ion Battery Charging Circuits Cell Phones, Media Players, Digital Cameras, PDAs
Applications SOT- 363 SC- 88 (6 LEADS)
S1 Value
- 8.0 ±8.0 Unit V V A
D1
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter Drain- to- Source Voltage Gate- to- Source Voltage Continuous Drain...