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NTJD4105C Small Signal MOSFET
20 V / −8.0 V, Complementary, +0.63 A / −0.775 A, SC−88
Features
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Complementary N and P Channel Device Leading −8.0 V Trench for Low RDS(on) Performance ESD Protected Gate − ESD Rating: Class 1 SC−88 Package for Small Footprint (2 x 2 mm) Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish DC−DC Conversion Load/Power Switching Single or Dual Cell Li−Ion Battery Supplied Devices Cell Phones, MP3s, Digital Cameras, PDAs
Parameter Symbol N−Ch P−Ch N−Ch P−Ch N−Ch C P−Ch C N−Ch C P−Ch C TA=25°C TA=85°C TA=25°C TA=85°C TA=25°C TA=85°C TA=25°C TA=85°C tp≤10 ms TA=25°C TA=85°C TA=25°C TA=85°C TJ, TSTG IS TL IDM PD VDSS VGS ID Value 20 −8.0 ±12 ±8.0 0.63 0.46 −0.775 −0.558 0.91 0.65 −1.1 −0.8 ±1.2 0.27 0.14 0.
NTJD4105C Datasheet
