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DATA SHEET www.onsemi.com
MOSFET – Power, Single, P-Channel, Trench, SC-88
-20 V, -4.2 A
NTJS4151P
V(BR)DSS −20 V
RDS(on) Typ 47 mW @ −4.5 V 70 mW @ −2.5 V 180 mW @ −1.8 V
ID Max −4.2 A
SC−88 (SOT−363)
Features
• Leading Trench Technology for Low RDS(ON) Extending Battery Life • SC−88 Small Outline (2x2 mm) for Maximum Circuit Board
Utilization, Same as SC−70−6
• Gate Diodes for ESD Protection • Pb−Free Package is Available
Applications
• High Side Load Switch • Cell Phones, Computing, Digital Cameras, MP3s and PDAs
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
−20
V
Gate−to−Source Voltage
VGS
±12
V
Continuous Drain Current (Note 1)
Steady TA = 25 °C
ID
State
TA = 85 °C
−3.3
A
−2.
NTJS4151P Datasheet
