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NTLJD3181PZ - Power MOSFET

Key Features

  • WDFN 2x2 mm Package with Exposed Drain Pads for Excellent Thermal Conduction.
  • Lowest RDS(on) Solution in 2x2 mm Package.
  • Footprint Same as SC.
  • 88 Package.
  • Low Profile (< 0.8 mm) for Easy Fit in Thin Environments.
  • ESD Protected.
  • This is a Pb.
  • Free Device.

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NTLJD3181PZ Power MOSFET −20 V, −4.0 A,Dual P−Channel, ESD, 2x2 mm WDFN Package Features • WDFN 2x2 mm Package with Exposed Drain Pads for Excellent Thermal Conduction • Lowest RDS(on) Solution in 2x2 mm Package • Footprint Same as SC−88 Package • Low Profile (< 0.8 mm) for Easy Fit in Thin Environments • ESD Protected • This is a Pb−Free Device Applications • Optimized for Battery and Load Management Applications in Portable Equipment • Li−Ion Battery Charging and Protection Circuits • High Side Load Switch MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS −20 V Gate−to−Source Voltage VGS ±8.0 V Continuous Drain Current (Note 1) Steady TA = 25°C ID State TA = 85°C −3.2 A −2.3 t ≤ 5 s TA = 25°C −4.