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NTLJF3118N
Power MOSFET and Schottky Diode
20 V, 4.6 A, N−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm WDFN Package
Features
• WDFN 2x2 mm Package Provides Exposed Drain Pad for
Excellent Thermal Conduction
• Footprint Same as SC−88 Package • 1.8 V VGS Rated RDS(on) • Low Profile (< 0.8 mm) for Easy Fit in Thin Environments • Low VF 2 A Schottky Diode • This is a Pb−Free Device
Applications
• DC−DC Boost/Buck Converter • Low Voltage Hard Disk DC Power Source
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
20
V
Gate−to−Source Voltage
VGS
±12 V
Continuous Drain Current Steady TA = 25°C
ID
(Note 1)
State TA = 85°C
3.8
A
2.8
t ≤ 5 s TA = 25°C
4.
NTLJF3118N Datasheet
