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NTLJF4156N
MOSFET – Power, N-Channel with Schottky Barrier Diode, Schottky Diode, mCool, WDFN 2X2 mm
30 V, 4.6 A, 2.0 A
Features
• WDFN Package Provides Exposed Drain Pad for Excellent Thermal
Conduction
• Co−Packaged MOSFET and Schottky For Easy Circuit Layout • RDS(on) Rated at Low VGS(on) Levels, VGS = 1.5 V • Low Profile (< 0.8 mm) for Easy Fit in Thin Environments • Low VF Schottky • This is a Pb−Free Device
Applications
• DC−DC Converters • Li−Ion Battery Applications in Cell Phones, PDA’s, Media Players • Color Display and Camera Flash Regulators
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±8.0
V
Continuous Drain Current (Note 1)
Steady TJ = 25°C
ID
State TJ = 85°C
3.
NTLJF4156N Datasheet
