Full PDF Text Transcription for NTLJF4156N (Reference)
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NTLJF4156N. For precise diagrams, and layout, please refer to the original PDF.
NTLJF4156N MOSFET – Power, N-Channel with Schottky Barrier Diode, Schottky Diode, mCool, WDFN 2X2 mm 30 V, 4.6 A, 2.0 A Features • WDFN Package Provides Exposed Drain Pad...
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30 V, 4.6 A, 2.0 A Features • WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction • Co−Packaged MOSFET and Schottky For Easy Circuit Layout • RDS(on) Rated at Low VGS(on) Levels, VGS = 1.5 V • Low Profile (< 0.8 mm) for Easy Fit in Thin Environments • Low VF Schottky • This is a Pb−Free Device Applications • DC−DC Converters • Li−Ion Battery Applications in Cell Phones, PDA’s, Media Players • Color Display and Camera Flash Regulators MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±8.0 V Continuous Drain Curren
NTLJF4156N Datasheet
