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NTLJS3113P - Power MOSFET

Key Features

  • 20 V,.
  • 7.7 A, mCoolt Single P.
  • Channel, 2x2 mm, WDFN Package.
  • WDFN Package Provides Exposed Drain Pad for Excellent Thermal.
  • Conduction 2x2 mm Footprint Same as SC.
  • 88 Package Lowest RDS(on) Solution in 2x2 mm Package 1.5 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate Drive Low Profile (< 0.8 mm) for Easy Fit in Thin Environments This is a Pb.
  • Free Device V(BR)DSS http://onsemi. com R.

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NTLJS3113P Power MOSFET Features −20 V, −7.7 A, mCoolt Single P−Channel, 2x2 mm, WDFN Package • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • Conduction 2x2 mm Footprint Same as SC−88 Package Lowest RDS(on) Solution in 2x2 mm Package 1.5 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate Drive Low Profile (< 0.8 mm) for Easy Fit in Thin Environments This is a Pb−Free Device V(BR)DSS http://onsemi.com RDS(on) MAX 40 mW @ −4.5 V −20 V 50 mW @ −2.5 V 75 mW @ −1.8 V 200 mW @ −1.5 V S −7.7 A ID MAX (Note 1) Applications • DC−DC Converters (Buck and Boost Circuits) • Optimized for Battery and Load Management Applications in • Portable Equipment such as, Cell Phones, PDA’s, Media Players, etc.