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MOSFET - Power, Single N-Channel, WDFN6
20 V
NTLJS3D0N02P8Z
Features
• Small Footprint (4 mm2) for Compact Design • Ultra−Low RDS(on) to Minimize Conduction Losses • These Devices are Pb−Free, Halogen−Free/BFR−Free and are RoHS
Compliant
Applications
• Wireless Charging • Power Load Switch • Power Management and Protection • Battery Management • DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
20
V
Gate−to−Source Voltage
VGS
±12
V
Continuous Drain Cur- Steady TA = 25°C
ID
20.2 A
rent RqJA (Notes 1, 3) State
TA = 85°C
14.6
Power Dissipation RqJA (Notes 1, 3)
TA = 25°C
PD
2.40 W
Continuous Drain Cur- Steady TA = 25°C
ID
12.1 A
rent RqJA (Notes 2, 3) State
TA = 85°C
8.
NTLJS3D0N02P8Z Datasheet
