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NTMD3N08LR2 - Power MOSFET

Key Features

  • http://onsemi. com.
  • Ultra Low On.
  • Resistance Provides Higher Efficiency.
  • RDS(on) = 0.215 W, VGS = 10 V.
  • RDS(on) = 0.245 W, VGS = 5.0 V Low Reverse Recovery Losses Internal RG = 50 W Designed for Power Management Solutions in 42 V Automotive System.

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www.DataSheet4U.com NTMD3N08LR2 Advance Information Power MOSFET 2.3 Amps, 80 Volts N–Channel Enhancement–Mode SO–8 Dual Package Features http://onsemi.com • Ultra Low On–Resistance Provides Higher Efficiency ♦ • • • • • • • • • • • RDS(on) = 0.215 W, VGS = 10 V ♦ RDS(on) = 0.245 W, VGS = 5.0 V Low Reverse Recovery Losses Internal RG = 50 W Designed for Power Management Solutions in 42 V Automotive System Applications IDSS and RDS(on) Specified at Elevated Temperature Avalanche Energy Specified Miniature SO–8 Surface Mount Package – Saves Board Space Mounting Information for SO–8 Package Provided 2.