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NTMD4102PR2 - Trench Power MOSFET

Key Features

  • & Benefits.
  • Leading -20 V Trench for Low RDS(on).
  • SO-8 Package Provides Excellent Thermal Performance.
  • Surface Mount SO-8 Package Saves Board Space.
  • Pb Free Package for Green Manufacturing.

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Full PDF Text Transcription (Reference)

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NTMD4102PR2 Product Preview Trench Power MOSFET -20 V, P-Channel, SO-8 Dual This P-Channel device was designed using ON Semiconductor’s leading edge trench technology for low RDS(on) performance in the SO-8 dual package for high power and current handling capability. The low RDS(on) performance is particularly suited for game systems, notebook and desktop computers, and printers.