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NTMD4820N
MOSFET – Power, Dual, N-Channel, SOIC-8
30 V, 8 A
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Dual SOIC−8 Surface Mount Package Saves Board Space
Applications
• Disk Drives • DC−DC Converters • Printers
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current RqJA (Note 1)
Power Dissipation RqJA (Note 1)
VDSS
30
V
VGS
±20
V
TA = 25°C
ID
6.4
A
TA = 70°C
5.1
TA = 25°C
PD
1.
NTMD4820N Datasheet
