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NTMD4840N
MOSFET – Power, Dual, N-Channel, SOIC-8
30 V, 7.5 A
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Dual SOIC−8 Surface Mount Package Saves Board Space • This is a Pb−Free Device
Applications
• Disk Drives • DC−DC Converters • Printers
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Rating
Symbol Value Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain Current RqJA (Note 1)
TA = 25°C
ID
TA = 70°C
5.5
A
4.4
Power Dissipation RqJA (Note 1)
TA = 25°C
PD
1.14 W
Continuous Drain
TA = 25°C
ID
Current RqJA (Note 2) Steady TA = 70°C
Power Dissipation
State TA = 25°C
PD
RqJA (Note 2)
4.5
A
3.5
0.
NTMD4840N Datasheet
