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NTMD4884NF Power MOSFET and Schottky Diode
Features
30 V, 5.7 A, Single N-Channel with 30 V, 2.8 A, Schottky Barrier Diode
•ăFETKYt Surface Mount Package Saves Board Space •ăIndependent Pin-Out for MOSFET and Schottky Allowing for
Design Flexibility •ăLow RDS(on) MOSFET and Low VF Schottky to Minimize Conduction Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThis is a Pb-Free Device
Applications
V(BR)DSS 30 V
www.DataSheet4U.com
http://onsemi.com N-CHANNEL MOSFET
RDS(on) Max 48 mW @ 10 V 70 mW @ 4.5 V ID Max 5.
NTMD4884NF Datasheet
