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NTMD4N03R2 - Power MOSFET

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  • Designed for use in low voltage, high speed switching.

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NTMD4N03R2 Power MOSFET 4 Amps, 30 Volts N−Channel SO−8 Dual Features www.DataSheet4U.com • Designed for use in low voltage, high speed switching applications • Ultra Low On−Resistance Provides Higher Efficiency and Extends Battery Life − RDS(on) = 0.048 W, VGS = 10 V (Typ) − RDS(on) = 0.065 W, VGS = 4.5 V (Typ) Miniature SO−8 Surface Mount Package − Saves Board Space Diode is Characterized for Use in Bridge Circuits Diode Exhibits High Speed, with Soft Recovery Dc−Dc Converters Computers Printers Cellular and Cordless Phones Disk Drives and Tape Drives VDSS 30 V http://onsemi.com RDS(ON) TYP 48 mΩ @ VGS = 10 V ID MAX 4.