NTMD6601NR2G
NTMD6601NR2G is Power MOSFET manufactured by onsemi.
Power MOSFET
80 V, 2.2 A, Dual N-Channel, SO-8
Features
- ăLow RDS(on) to Minimize Conduction Losses
- ăLow Capacitance to Minimize Driver Losses
- ăOptimized Gate Charge to Minimize Switching Losses
- ăDual SO-8 Surface Mount Package Saves Board Space
- ăThis is a Pb-Free Device
Applications
- ăLCD Displays
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Rating
Symbol Value
Drain-to-Source Voltage
Gate-to-Source Voltage
- Continuous
Continuous Drain Current RqJA (Note 1)
Power Dissipation RqJA (Note 1)
Continuous Drain Current RqJA (Note 2)
Power Dissipation RqJA (Note 2)
Continuous Drain Current RqJA t < 5 s (Note 1)
TA = 25°C TA = 70°C TA = 25°C
Steady State
TA =...
