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NTMD6N04 - Power MOSFET

Features

  • Designed for use in low voltage, high speed switching.

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NTMD6N04, NVMD6N04 Power MOSFET 40 V, 5.8 A, Dual N−Channel SOIC−8 Features • Designed for use in low voltage, high speed switching applications • Ultra Low On−Resistance Provides Higher Efficiency and Extends Battery Life − RDS(on) = 0.027 W, VGS = 10 V (Typ) − RDS(on) = 0.034 W, VGS = 4.
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