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NTMFD1D1N02X - N-Channel Power MOSFET

Key Features

  • Small Footprint (5x6mm) for Compact Design.
  • Low RDS(on) to Minimize Conduction Losses.
  • Low QG and Capacitance to Minimize Driver Losses.
  • These are Pb.
  • free, Halogen Free / BFR Free and are RoHS Compliant Typical.

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Full PDF Text Transcription for NTMFD1D1N02X (Reference)

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MOSFET - Power, Dual, N-Channel, Power Clip, POWERTRENCH), Asymmetric 25 V NTMFD1D1N02X Features • Small Footprint (5x6mm) for Compact Design • Low RDS(on) to Minimize Co...

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mall Footprint (5x6mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These are Pb−free, Halogen Free / BFR Free and are RoHS Compliant Typical Applications • DC−DC Converters • System Voltage Rails MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Q1 Q2 Unit Drain−to−Source Voltage Gate−to−Source Voltage VDSS 25 25 V VGS +16V +16V V −12V −12V Continuous Drain Cur- Steady TC = 25°C ID 75 178 A rent RqJC (Note 3) State TC = 85°C 54 128 Power Dissipation RqJC (Note 3) TC = 25°C PD 27 44 W Continuous Drain Cur- Steady TA = 25°C ID 20 40 A

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