Datasheet Summary
MOSFET
- Dual, N-Channel
60 V, 14.4 mW, 42 A
Features
- Small Footprint (5x6 mm) for pact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- These Devices are Pb- Free, Halogen Free/BFR Free and are RoHS pliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
VDSS
Gate- to- Source Voltage
±20
Continuous Drain Current RqJC (Notes 1, 2, 3)
Power Dissipation RqJC (Notes 1, 2)
TC = 25°C
Steady TC = 100°C
State TC = 25°C
TC = 100°C
Continuous Drain Current RqJA (Notes 1, 2, 3)
Power Dissipation RqJA (Notes 1 &...