NTMFS08N004C Description
This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
NTMFS08N004C Key Features
- Shielded Gate MOSFET Technology
- Max rDS(on) = 4.0 mW at VGS = 10 V, ID = 44 A
- Max rDS(on) = 12.5 mW at VGS = 6 V, ID = 22 A
- 50% Lower Qrr than Other MOSFET Suppliers
- Lowers Switching Noise/EMI
- MSL1 Robust Package Design
- 100% UIL Tested
- These Devices are Pb-Free and are RoHS pliant