Datasheet4U Logo Datasheet4U.com

NTMFS08N004C - 80V 126A N-Channel Power MOSFET

General Description

ON Semiconductor’s advanced PowerTrench process that incorporates Shielded Gate technology.

This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

Key Features

  • Shielded Gate MOSFET Technology.
  • Max rDS(on) = 4.0 mW at VGS = 10 V, ID = 44 A.
  • Max rDS(on) = 12.5 mW at VGS = 6 V, ID = 22 A.
  • 50% Lower Qrr than Other MOSFET Suppliers.
  • Lowers Switching Noise/EMI.
  • MSL1 Robust Package Design.
  • 100% UIL Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

📥 Download Datasheet

Datasheet Details

Part number NTMFS08N004C
Manufacturer onsemi
File Size 469.11 KB
Description 80V 126A N-Channel Power MOSFET
Datasheet download datasheet NTMFS08N004C Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NTMFS08N004C MOSFET – Power Trench, N‐Channel, Shielded Gate 80 V, 126 A, 4.0 mW General Description This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode. Features • Shielded Gate MOSFET Technology • Max rDS(on) = 4.0 mW at VGS = 10 V, ID = 44 A • Max rDS(on) = 12.