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NTMFS08N004C
MOSFET – Power Trench, N‐Channel, Shielded Gate
80 V, 126 A, 4.0 mW
General Description This N-Channel MV MOSFET is produced using
ON Semiconductor’s advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Features
• Shielded Gate MOSFET Technology • Max rDS(on) = 4.0 mW at VGS = 10 V, ID = 44 A • Max rDS(on) = 12.