Click to expand full text
NTMFS4120N Power MOSFET
30 V, 31 A, Single N-Channel, SO-8 Flat Lead
Features
www.DataSheet4U.com
http://onsemi.com
V(BR)DSS 30 V RDS(on) Typ 3.5 mW @ 10 V 4.2 mW @ 4.5 V D ID Max (Note 1) 31 A
•ăLow RDS(on) •ăOptimized Gate Charge •ăLow Inductance SO-8 Package •ăThese are Pb-Free Devices
Applications
•ăNotebooks, Graphics Cards •ăDC-DC Converters •ăSynchronous Rectification
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1 ) Steady State t v10 s Power Dissipation (Note 1) Steady State t v10 s Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current Steady State TA = 25°C TA = 85°C TA = 25°C PD IDM TJ, Tstg IS EAS ID TA = 25°C TA = 85°C TA = 25°C PD TA = 25°C 6.9 11 8.0 0.
NTMFS4120N Datasheet
