The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
NTMFS4921N
MOSFET – Power, Single, N-Channel, SO-8 FL
30 V, 58.5 A
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Thermally Enhanced SO−8 Package • These are Pb−Free Device
Applications
• CPU Power Delivery • DC−DC Converters • High Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain C(Nuortreen1t)RqJA
Power Dissipation RqJA (Note 1)
Continuous Drain
Current 10 sec
RqJA
v
TA = 25°C TA = 85°C TA = 25°C
TA = 25°C TA = 85°C
VDSS VGS ID
PD
ID
30 ±20 13.8 10 2.14
22.4 16.
NTMFS4921N Datasheet
