NTMFS4937N Datasheet | onsemi

Features 30 V, 70 A, Single N- Channel, SO- 8 FL - - - - Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant .. http://onsemi. V(BR)DSS 30 V RDS(ON) MAX 4.5 m W @ 10 V 7.0 m W @ 4.5 V D (5,6) ID MAX 70 A Applications - CPU Power Delivery - DC- DC Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain- to- Source Voltage Gate- to- Source Voltage Continuous Drain Current Rq JA (Note 1) Power Dissipation Rq JA (Note 1) Continuous Drain Current Rq JA ≤ 10 s (Note 1) Power Dissipation Rq JA ≤ 10 s (Note 1) Continuous Drain Current Rq JA (Note 2) Power Dissipation Rq JA (Note 2) Continuous Drain Current Rq JC (Note 1) Power Dissipation Rq JC (Note 1) Pulsed Drain Current Steady State TA = 25°C TA = 100°C TA = 25°C TA = 25°C TA = 100°C TA = 25°C TA = 25°C TA = 100°C TA = 25°C TC = 25°C TC = 85°C TC = 25°C TA = 25°C, tp = 10 ms TA = 25°C PD IDM IDmax TJ, TSTG IS d V/dt EAS PD ID PD ID PD ID Symbol VDSS VGS ID Value 30 ±20 17.1 10.9 2.6 30 19 8.1 10.2 6.5 0.92 70 44 43 210 100 - 55 to +150 40 6.5 68.5 W A A °C A V/ns m J W A W A Unit V V A G (4) S (1,2,3) N- CHANNEL MOSFET MARKING DIAGRAM D S S S G 4937N AYWWG G D D SO- 8 FLAT LEAD CASE 488AA STYLE 1 A = Assembly Location Y = Year WW = Work Week G = Pb- Free Package (Note: Microdot may be in either location) Current Limited by Package Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source DV/DT ORDERING INFORMATION Device NTMFS4937NT1G NTMFS4937NT3G Package SO- 8 FL (Pb- Free) SO- 8 FL (Pb- Free) Shipping† 1500 / Tape & Reel 5000 / Tape & Reel Single Pulse Drain- to- Source Avalanche Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 37 Apk, L = 0.1 m H, RG = 25 W) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress...