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NTMFS4936N, NTMFS4936NC
MOSFET – Power, Single, N-Channel, SO-8 FL
30 V, 79 A
Features
• Low RDS(on), Low Capacitance and Optimized Gate Charge to
Minimize Conduction, Driver and Switching Losses
• Next Generation Enhanced Body Diode, Engineered for Soft
Recovery, Provides Schottky−Like Performance
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• CPU Power Delivery • DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current RqJA (Note 1)
VDSS
30
V
VGS
±20
V
TA = 25°C
ID
19.5
A
TA = 100°C
12.3
Power Dissipation RqJA (Note 1)
Continuous Drain Current RqJA ≤ 10 s (Note 1)
TA = 25°C
PD
TA = 25°C
ID
TA = 100°C
2.
NTMFS4936N Datasheet
