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NTMFS4939N - Power MOSFET

Features

  • 30 V, 53 A, Single N.
  • Channel, SO.
  • 8 FL.
  • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant www. DataSheet4U. com http://onsemi. com V(BR)DSS 30 V RDS(ON) MAX 5.5 mW @ 10 V 8.0 mW @ 4.5 V D (5,6) Value 30 ±20 15.7 9.9 PD ID PD ID PD ID PD IDM IDmax TJ, TSTG IS dV/dt EAS 2.58 26 17 7.6.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTMFS4939N Power MOSFET Features 30 V, 53 A, Single N−Channel, SO−8 FL • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.DataSheet4U.com http://onsemi.com V(BR)DSS 30 V RDS(ON) MAX 5.5 mW @ 10 V 8.0 mW @ 4.5 V D (5,6) Value 30 ±20 15.7 9.9 PD ID PD ID PD ID PD IDM IDmax TJ, TSTG IS dV/dt EAS 2.58 26 17 7.6 9.3 5.9 0.92 53 34 30 159 100 −55 to +150 27 7.
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