The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
NTMFS4955N
MOSFET – Power, Single, N-Channel, SO-8 FL
30 V, 48 A
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Optimized for 5 V, 12 V Gate Drives • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• CPU Power Delivery • DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current RqJA (Note 1)
TA = 25°C TA = 100°C
Power Dissipation RqJA (Note 1)
Continuous Drain Current RqJA ≤ 10 s (Note 1)
TA = 25°C
TA = 25°C TA = 100°C
Power Dissipation RqJA ≤ 10 s (Note 1)
Continuous Drain Current RqJA (Note 2)
Steady State
TA = 25°C
TA = 25°C TA
NTMFS4955N Datasheet
