Full PDF Text Transcription for NTMFS6B05N (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
NTMFS6B05N. For precise diagrams, and layout, please refer to the original PDF.
NTMFS6B05N Power MOSFET 100 V, 8 mW, 104 A, Single N−Channel Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG a...
View more extracted text
Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJC (Notes 1, 2, 3) Power Dissipation RqJC (Notes 1, 2) Steady State TC = 25°C TC = 100°C TC = 25°C TC = 100°C Continuous Drain Current RqJA (Notes 1, 2, 3) Power Dissipation RqJA (Notes 1 & 2) Steady State TA = 25°C TA = 100°C TA = 25°C TA = 100°C Pulsed Drain Current TA = 25°C, tp = 10 ms O