The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
MOSFET – Power, Single N-Channel
80 V, 64 A, 9.4 mW
NTMFS6H848N
Features
Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Symbol
Parameter
Value Unit
VDSS Drain−to−Source Voltage
80
V
VGS Gate−to−Source Voltage
20
V
ID
Continuous Drain
Current RqJC
(Notes 1, 3)
PD Power Dissipation RqJC (Note 1)
TC = 25C
57
A
Steady TC = 100C
40
State TC = 25C
73
W
TC = 100C
37
ID
Continuous Drain
Current RqJA
(Notes 1, 2, 3)
PD Power Dissipation RqJA (Notes 1, 2)
TA = 25C
13
A
Steady TA = 100C
9.0
State TA = 25C
3.7
W
TA = 100C
1.
NTMFS6H848N Datasheet
