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MOSFET - Power, Dualcool N-Channel, PQFN8
120 V, 6.1 mW, 92 A
NTMFSC006N12MC
Features
• Advanced Dual−sided Cooled Packaging • Ulra Low RDS(on) • MSL1 Robust Packaging Design
Typical Applications
• Primary DC−DC FET • Synchronous Rectifier • DC−DC Conversion
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
120
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain Cur- Steady TC = 25°C
ID
rent RqJC (Notes 1, 3) State TC = 100°C
92
A
57
Power Dissipation RqJC (Note 1)
TC = 25°C
PD
TC = 100°C
104 W 41
Continuous Drain Current RqJA (Notes 1, 2, 3)
Steady TA = 25°C
ID
State
TA = 100°C
14
A
9
Power Dissipation RqJA (Notes 1, 2)
TA = 25°C
PD
TA = 100°C
2.7
W
1.
NTMFSC006N12MC Datasheet
