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NTMFSC0D9N04C - N-Channel MOSFET

Key Features

  • Advanced Dual.
  • sided Cooled Packaging.
  • Small Footprint (5x6 mm) for Compact Design.
  • Ulra Low RDS(on) to Minimize Conduction Losses.
  • Low QG and Capacitance to Minimize Driver Losses.
  • These Devices are Pb.
  • Free and are RoHS Compliant.
  • MSL1 Robust Packaging Design.

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MOSFET - Power, DUAL COOL) N-Channel, DFN8 5x6 40 V, 0.87 mW, 310 A NTMFSC0D9N04C Features • Advanced Dual−sided Cooled Packaging • Small Footprint (5x6 mm) for Compact Design • Ulra Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant • MSL1 Robust Packaging Design MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Steady Current RqJC (Note 2) State Power Dissipation RqJC (Note 2) Continuous Drain Current RqJA (Notes 1, 2) Steady State TC = 25°C TA = 25°C VDSS VGS ID PD ID 40 V ±20 V 313 A 166 W 48.9 A Power Dissipation RqJA (Notes 1, 2) PD 4.