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MOSFET - Power, DUAL COOL) N-Channel, DFN8 5x6
40 V, 0.87 mW, 310 A
NTMFSC0D9N04C
Features
• Advanced Dual−sided Cooled Packaging • Small Footprint (5x6 mm) for Compact Design • Ulra Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant
• MSL1 Robust Packaging Design
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Steady
Current RqJC (Note 2) State
Power Dissipation RqJC (Note 2)
Continuous Drain Current RqJA (Notes 1, 2)
Steady State
TC = 25°C TA = 25°C
VDSS VGS ID
PD
ID
40
V
±20
V
313
A
166 W
48.9 A
Power Dissipation RqJA (Notes 1, 2)
PD
4.